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IRIS-A6372
Features
* Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. * Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. * Low start-up circuit current (50uA max) * Built-in Active Low-Pass Filter for stabilizing the operation in case of light load * Avalanche energy guaranteed MOSFET with high VDSS * The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. * No VDSS de-rating is required. * Built-in constant voltage drive circuit * Various kinds of protection functions * Pulse-by-pulse Overcurrent Protection (OCP) * Overvoltage Protection with latch mode (OVP) * Thermal Shutdown with latch mode (TSD)
Type
INTEGRATED SWITCHER
Package Outline
8 Lead PDIP
Key Specifications
MOSFET VDSS(V) 900 RDS(ON) MAX 7.7 AC input(V) 23015% IRIS-A6372 85 to 264 Pout(W) Note 1 6 4
Descriptions
IRIS-A6372 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
STR-A6372
1 2 3 4 8 7 6 5
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IRIS-A6372
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol IDpeak IDMAX
Definition Drain Current *1 Maximum switching current *5
Terminals Max. Ratings 8 1.18 8 1.18
Units A A
EAS Vin Vth PD1 PD2 TF Top Tstg Tch
Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature
8-1 3-2 4-2 8-1 3-2 -
24.9 35 6 1.35 0.14 -20 ~ +125 -20 ~ +125 -40 ~ +125 150
mJ V V W W
Note Single Pulse V1-2=0.82V Ta=-20~+125 Single Pulse VDD=99V,L=20mH IL=1.18A
*6 Specified by VinxIin
Refer to recommended operating temperature
*1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. *6 When embedding this hybrid IC onto the printed circuit board (board size 15mmx15mm)
Fig.1 V1-2
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IRIS-A6372
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=20V,unless otherwise specified)
Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP)
Definition Operation start voltage Operation stop voltage *7 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage
MIN 15.8 9.1 12 0.7 0.7 23.2 7.9 135
Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 -
MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 70 10.5 -
Units V V mA A sec V mA V A V
Test Conditions
Vin=019.4V Vin=19.49.1V
Vin=15V
Vin=027.8V Vin=27.8 (Vin(OFF)-0.3)V Vin=27.87.9V
Iin(H) Latch circuit sustaining current *8 Vin(La.OFF) Latch circuit release voltage *7,8 Tj(TSD) Thermal shutdown operating temperature
-
*7 The relation of Vin(OFF)Vin(La.OFF) is applied for each product. *8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol VDSS IDSS
Definition Drain-to-Source breakdown voltage Drain leakage current
MIN 900 *9 -
Ratings TYP -
MAX 300 7.7 250 52
Units V A nsec /W
Test Conditions
ID=300A V2- 1=0V(short) VDS =900V V2- 1=0V(short) V3- 2=10V ID=0.4A
RDS(ON) On-resistance tf Switching time ch-F Thermal resistance
Between channel and internal frame
*9 Internal frame temperature (TF) is measured at the root of the Pin 5.
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IRIS-A6372
IRIS-A6372
A.S.O. temperature derating coefficient curve
IRIS-A6372
MOSFET A.S.O. Curve 10
100
A.S.O. temperature derating coefficient[%]
80
Drain current limit by ON resistance
0.1ms
Drain CurrentD I [A]
60
1
1ms
40
0.1
ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use.
20
0 0 20 40 60 80 100 120
0.01 1 10 100 D rai n-to-Source V ol tage V D S[V ] 1000
Internal frame temperature TF []
IRIS-A6372 1.4
Maximum Switching current derating curve Ta= 20+125
IRIS-A6372 Avalanche energy derating curve 100
Maximum Switchng Current IDMAX[A]
1.0
EAS temperature derating coefficient[%]
1.2
80
60
0.8
0.6
40
0.4
20
0.2
0
0.0 0.8 0.9 1.0 V1-2 [V] 1.1 1.2
25
50
75
100
125
150
Channel temperature Tch []
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IRIS-A6372
IRIS-A6372 MOSFET Ta-PD1 Curve 1.6 1.4 1.2
IRIS-A6372 MIC TF-PD2 Curve 0.16
PD1=1.35[W]
PD2=0.14[W]
0.14 0.12 Power dissipation P D2[W] 0.10 0.08 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 140 160 Internal frame temperature TF[]
Power dissipation PD1[W]
1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta[]
IRIS-A6372 Transient thermal resistance curve 10
Transient thermal resistance ch-c[/W]
1
0.1
0.01
1
10
100
ti e t [sec] m
1m
10m
100m
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IRIS-A6372 Block Diagram
3 Vin
OVP UVLO

REG
Latch Internal Bias Delay
TSD

REG
7,8 D
PWM OSC
Latch
SQ R
Drive 1 S OCP

Comp. Icont
4 OCP/FB 2,5 GND
Lead Assignments
Pin Assignment (Top View) Source GND Vin OCP/FB 1 2 3 4 8 7 6 5 Drain Drain N.C. GND
Pin No.
1 2 3 4 5 6 7
Symbol S GND Vin OCP/FB GND N.C. D
Description Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Ground Pin Drain Pin
Function MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Ground Not Connected MOSFET drain
Other Functions
O.V.P. - Overvoltage Protection Circuit T.S.D. - Thermal Shutdown Circuit
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IRIS-A6372
Case Outline
a. Type Number b. Lot Number 1st letterThe last digit of year 2nd letterMonth (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letterWeek 13 : Arabic numerals c. Registration Number
8
7
6
5
A6372
R I
1 2 3 4
a
b c
Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information.
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